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FMG22S 参数 Datasheet PDF下载

FMG22S图片预览
型号: FMG22S
PDF下载: 下载PDF文件 查看货源
内容描述: 10.0安培中空玻璃钝化超快速整流器 [10.0 Ampere Insulated Glass Passivated Super Fast Recovery Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 620 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号FMG22S的Datasheet PDF文件第2页  
FMG22 thru FMG24
FMG22 thru FMG24
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
®
Pb
Pb Free Plating Product
10.0 Ampere Insulated Glass Passivated Super Fast Recovery Rectifiers
Features
¬
Fast switching for high efficiency
¬
Low forward voltage drop
¬
High current capability
¬
Low reverse leakage current
¬
High surge current capability
Mechanical Data
¬
Case:ITO-220AB Insulated
¬
Epoxy: UL 94V-0 rate flame retardant
¬
Terminals: Solderable per MIL-STD-202
method 208
¬
Polarity:As marked on diode body
¬
Mounting position: Any
¬
Weight: 2.2 gram approximately
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.606(15.4)
.583(14.8)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "S"
Suffix "R"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
FMG22S
FMG22R
200
140
200
FMG23S
FMG23R
300
210
300
10.0
FMG24S
FMG24R
400
280
400
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
100
A
V
F
I
R
Trr
C
J
R
JC
T
J
, T
STG
0.98
1.3
10.0
250
35
65
2.2
-55 to +150
1.3
V
uA
uA
nS
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/