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FMU24S 参数 Datasheet PDF下载

FMU24S图片预览
型号: FMU24S
PDF下载: 下载PDF文件 查看货源
内容描述: [10 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 668 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号FMU24S的Datasheet PDF文件第2页  
FMU22S thru FMU26S
Pb
®
Pb Free Plating Product
FMU22S/FMU23S/FMU24S/FMU26S
10 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
ITO-220AB
Unit:mm
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,EPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Fully Isolated Molding TO-220FP
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "S"
Suffix "R"
Doubler
Tandem Polarity
Suffix "U"
Series
Tandem Polarity
Suffix "UR"
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
FMU22S
200
140
200
FMU23S
FMU24S
400
280
400
10.0
FMU26S
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
100
A
V
F
I
R
Trr
C
J
R
JC
T
J
, T
STG
0.98
1.3
5.0
100
35
65
2.2
-55 to +150
1.7
V
uA
uA
nS
pF
o
C/W
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.06
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/