GF2045MG thru GF20100MG
®
GF2045MG thru GF20100MG
Pb Free Plating Product
TO-263
Pb
20.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
Unit : inch (mm)
Mechanical Data
Cases: JEDEC TO-263/D2PAK molded plastic body
Terminals: Pure tin plated, lead free. solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 1.8 gram approximately
LEFT PIN
RIGHT PIN
BOTTOM SIDE
HEAT SINK
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125℃
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125
℃
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage (Note 2)
I
F
=20A, T
A
=25℃
I
F
=20A, T
A
=125℃
Maximum Reverse Current @ Rated VR
Voltage Rate of Change (Rated V
R
)
Typical Junction Capacitance
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
T
A
=25
℃
T
A
=125
℃
Symbol
GF2045MG GF2060MG GF20100MG
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
V
F
1
0.75
0.65
I
R
dV/dt
Cj
R
θjC
T
J
T
STG
560
3
- 65 to + 150
- 65 to + 150
0.2
15
10
10000
420
0.82
0.72
45
31
45
60
42
60
20
40
150
0.5
0.95
0.87
0.1
5
100
70
100
Unit
V
V
V
A
A
A
A
V
mA
V/us
pF
℃
℃
/W
℃
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
