HER3020PT thru HER3060PT
Pb
®
HER3020PT thru HER3060PT
Pb Free Plating Product
30.0 Ampere Dual SwitchMode Type High Efficiency Rectifier Diodes
TO-3P/TO-247AD
Unit: inch (mm)
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Special for inverter/high power motor control
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
o
260 C, 0.16”(4.06mm)from case for 10 seconds
.640(16.25)
.620(15.75)
.142(3.6)
.125(3.2)
.199(5.05)
.175(4.45)
.087(2.2)
.070(1.8)
.600(15.25)
.580(14.75)
.839(21.3)
.819(20.8)
.095(2.4)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.798(20.25)
.777(19.75)
.170(4.3)
.145(3.7)
Mechanical Data
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
.030(0.75)
.017(0.45)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
Positive
Common Cathode
Suffix "PT"
Negative
Common Anode
Suffix "PA"
Doubler
Series Connection
Suffix "PD"
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=125
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 15.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
o
o
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
HER3020PT
HER3020PA
HER3020PD
200
140
200
HER3040PT
HER3040PA
HER3040PD
400
280
400
30.0
HER3060PT
HER3060PA
HER3060PD
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
300
A
V
F
I
R
Trr
C
J
T
J
, T
STG
0.98
1.3
10
500
50
175
-55 to +150
1.7
V
uA
uA
60
145
nS
pF
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A I
R
= 1. 0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
