HFA08TB120
HFA08TB120
Pb Free Plating Product
10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
®
Pb
APPLICATION
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
TO-220AC/TO-220C-2P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
Base Backside
Internal Configuration
Anode
Cathode
GENERAL DESCRIPTION
HFA08TB120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
R
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
P
D
T
J
T
STG
Torque
R
θJC
Weight
Parameter
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
Thermal Resistance
T
C
=110°C
T
C
=110°C
T
C
=25°C unless otherwise specified
Test Conditions
Values
1200
1200
10
15
100
70
-40 to +150
-40 to +150
Recommended（M3）
Junction-to-Case
1.1
1.8
2.2
Unit
V
V
A
A
A
W
°C
°C
N·m
°C /W
g
Max.
100
500
--
--
--
--
--
--
--
Unit
µA
µA
V
V
ns
ns
A
ns
A
T
J
=45°C, t=10ms, 50Hz, Sine
ELECTRICAL CHARACTERISTICS
Symbol
I
RM
Parameter
Reverse Leakage Current
Test Conditions
V
R
=1200V
V
R
=1200V, T
J
=125°C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Time
Max. Reverse Recovery Current
I
F
=10A
I
F
=10A, T
J
=125°C
T
C
=25°C unless otherwise specified
Min.
--
--
--
--
--
--
--
--
--
Typ.
--
--
2.4
1.85
22
44
3.5
220
6.5
V
F
t
rr
t
rr
I
RRM
t
rr
I
RRM
I
F
=1A, V
R
=30V, di
F
/dt=-200A/μs
V
R
=600V, I
F
=10A
di
F
/dt=-200A/μs, T
J
=25°C
V
R
=600V, I
F
=10A
di
F
/dt=-200A/μs, T
J
=125°C
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
