MBRF2040CT thru MBRF20250CT
®
MBRF2040CT thru MBRF20250CT
Pb Free Plating Product
Pb
20.0 Ampere Insulated FullPak High Voltage Schottky Barrier Rectifiers
Features
Pl
astic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
o
260 C/10 seconds,0.25”(6.35mm)from case
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.606(15.4)
.583(14.8)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Mechanical Data
Cases: Section Copper Strip TO-220FP
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Case
Maximum Ratings And Electrical Characteristics
Parameter
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward Voltage@10A, T
A
=25℃
@10A, T
A
=125℃
@20A, T
A
=25℃
Operating Temperature
T
J
V
F
V
RRM
V
RMS
V
DC
Symbol
MBRF2040CT
MBRF2040CT
MBRF2060CT
MBRF2060CT
Section Copper Strip TO-220FP
Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBRF20100CT
MBRF20100CT
MBRF20150CT
MBRF20150CT
MBRF20200CT
MBRF20200CT
MBRF20250CT
MBRF20250CT
Unit
40
28
40
0.70
0.57
0.84
60
42
60
0.79
0.70
0.95
100
70
100
0.81
0.71
0.95
150
105
150
0.87
0.77
1.0
-50 ~ +150
200
140
200
0.90
0.80
1.0
250
175
250
0.95
0.85
-
V
V
V
V
℃
Parameter
Forward Rectified Current
Forward Surge Current
Reverse Current
Thermal Resistance
Diode Junction Capacitance
Storage Temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V
R
=V
RRM
, T
A
=25℃
V
R
=V
RRM
, T
A
=125℃
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
I
O
I
FSM
I
R
R
ΘJA
C
J
T
STG
Min.
Typ.
Max.
20
150
0.1
10
Unit
A
A
mA
℃/W
30
150
-50
+150
pF
℃
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
