MBRS6040CT PDF Datasheet浏览和下载

型号.:
MBRS6040CT
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内容描述:
[60 Amperes,40 Volts Dual Common Cathode Surface Mount Schottky Rectifiers]
文件大小:
565 K
文件页数:
2 Pages
品牌Logo:
品牌名称:
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
PCB Prototype
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MBRS6040CT
®
Pb Free Plating Product
MBRS6040CT
Pb
60 Amperes,40 Volts Dual Common Cathode Surface Mount Schottky Rectifiers
D2PAK/TO-263AB
Unit:inch(mm)
Features
For surface mounted application
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High
o
temperature soldering guaranteed:
260 C/10 seconds at terminals
4
Mechanical Data
Cases: JEDEC D PAK /TO-263-2L molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.06 ounce, 1.70 gram approximately
2
4
4
4
4
Case
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "CT"
Suffix "CTA"
Doubler
Tandem Polarity
Suffix "CTD"
Series
Tandem Polarity
Suffix "CTS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 30A, T
J
=25°C
I
F
= 30A, T
J
=125°C
I
F
= 60A, T
J
=25°C
I
F
= 60A, T
J
=125°C
Maximum reverse current @ rated V
R
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
MBRS6040CT
40
28
40
60
250
UNIT
V
V
V
A
A
V
F
0.75
0.70
1.05
0.98
0.1
40
10000
1
- 55 to +150
- 55 to +150
V
I
R
dV/dt
R
θJC
T
J
T
STG
mA
V/μs
°C/W
°C
°C
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/