MUR1220CA thru MUR1260CA
®
MUR1220CA/MUR1240CA/MUR1260CA
Pb Free Plating Product
Pb
12 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
TO-220AB
9.90
±0.20
φ3
0
.6
0
.2
±0
Unit:mm
4.50
±0.20
1.30
±0.20
15.70
±0.20
2.80
±0.20
13.08
±0.20
Mechanical Data
Case: Heatsink TO-220AB/TO-220C
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
0.80
±0.20
2.54typ
2.54typ
0.50
±0.20
3.02
±0.20
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
9.19
±0.20
6.50
±0.20
1.27
±0.20
1.52
±0.20
2.40
±0.20
Case
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "CT"
Suffix "CA"
Series Connection
Doubler
Tandem Polarity Tandem Polarity
Suffix "GD"
Suffix "DR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 6.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
MUR1220CA MUR1240CA MUR1260CA
UNIT
200
140
200
400
280
400
12.0
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
100
A
V
F
I
R
Trr
C
J
R
JC
T
J
, T
STG
0.98
1.3
5.0
100
35
65
2.2
-55 to +150
1.7
V
uA
uA
nS
pF
o
C/W
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
