MUR15120
MUR15120
Pb Free Plating Product
15 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
®
Pb
APPLICATION
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
TO-220AC/TO-220C-2P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
Base Backside
Internal Configuration
Anode
Cathode
GENERAL DESCRIPTION
MUR15120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
T
C
=25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
V
R
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
P
D
T
J
T
STG
Torque
R
thJC
Weight
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module to Sink
Junction to Case Thermal Resistance
Recommended（M3）
T
C
=100℃
T
C
=100℃
T
J
=45℃,t=10ms, 50Hz, Sine
Unit
V
1200
15
21
150
125
-55 to +150
-55 to +125
1.1
1.0
2.5
A
W
℃
℃
Nm
℃
/W
g
ELECTRICAL CHARACTERISTICS
T
C
=25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
I
RM
Maximum Reverse Leakage Current
Forward Voltage
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Time
Maximum Reverse Recovery Current
V
R
=1200V
V
R
=1200V, T
J
= 125℃
I
F
=15A
I
F
=15A,T
J
=125℃
(I
F
= 1A, dI
F
/dt = -200A/μs, V
R
= 30V)
(I
F
= 0.5A, I
R
=1A, I
RR
= 0.25A)
I
F
=15A,V
R
=600V,
dI
F
/dt = -200A/μs
I
F
= 15A,V
R
=600V,
dI
F
/dt = -200A/μs ,T
J
=125℃
10
1
2.8
2.3
25
35
72
5
240
7.5
3.2
30
40
μA
mA
V
ns
ns
ns
A
ns
A
V
F
trr
trr
trr
I
RRM
trr
I
RRM
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
