MUR3020CT thru MUR3060CT
Pb
®
MUR3020CT thru MUR3060CT
Pb Free Plating Product
30.0 Ampere Dual Common Cathode Ultra Fast Recovery Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Case
Doubler
Negative
Positive
*
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CTA"
Suffix "CTD"
Suffix "CT"
Available for Mass Production
*
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=125
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 15.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
o
o
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MUR3020CT MUR3040CT MUR3060CT
MUR3020CTA MUR3040CTA MUR3060CTA
UNIT
MUR3020CTD MUR3040CTD MUR3060CTD
200
140
200
400
280
400
30.0
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
300
A
V
F
I
R
Trr
C
J
T
J
, T
STG
0.98
1.3
10
500
60
150
-55 to +150
1.7
V
uA
uA
nS
pF
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A I
R
= 1
.
0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
