MUR3020PA thru MUR3060PA
®
Pb
MUR3020PA thru MUR3060PA
Pb Free Plating Product
TO-3P/TO-247AD
30.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifier
Unit: inch (mm)
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
o
260 C, 0.16”(4.06mm)from case for 10 seconds
.640(16.25)
.620(15.75)
.142(3.6)
.125(3.2)
.199(5.05)
.175(4.45)
.087(2.2)
.070(1.8)
.600(15.25)
.580(14.75)
.839(21.3)
.819(20.8)
.095(2.4)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.798(20.25)
.777(19.75)
.170(4.3)
.145(3.7)
Mechanical Data
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
.030(0.75)
.017(0.45)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
Positive
Common Cathode
Suffix "PT"
Negative
Common Anode
Suffix "PA"
Doubler
Series Connection
Suffix "PD"
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=125
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 15.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
o
o
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MUR3020PT MUR3040PT
MUR3020PA MUR3040PA
MUR3020PD MUR3040PD
200
140
200
400
280
400
30.0
MUR3060PT
MUR3060PA
MUR3060PD
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
300
A
V
F
I
R
Trr
C
J
T
J
, T
STG
0.98
1.3
10
500
35
150
-55 to +150
1.7
V
uA
uA
nS
pF
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A I
R
= 1
.
0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
