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MURB1660CTD 参数 Datasheet PDF下载

MURB1660CTD图片预览
型号: MURB1660CTD
PDF下载: 下载PDF文件 查看货源
内容描述: [16.0 Ampere Surface Mount Tandem Polarity Ultra Fast Recovery Rectifier]
分类和应用:
文件页数/大小: 2 页 / 256 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号MURB1660CTD的Datasheet PDF文件第2页  
MURB1620CTD thru MURB1660CTD
®
MURB1620CTD thru MURB1660CTD
Pb
Pb Free Plating Product
16.0 Ampere Surface Mount Tandem Polarity Ultra Fast Recovery Rectifier
Feature
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
D2PAK/TO-263
Unit : inch (mm)
Automotive Environment(Inverters/Converters)
Plating Power Supply,Adaptor,SMPS and UPS
Car Audio Amplifiers and Sound Device System
Mechanical Data
Case:TO-263/D2PAK pkg case
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Positive
Common Cathode
Suffix "CT"
Negative
Common Anode
Suffix "CTR"
Doubler
Tandem Polarity
Suffix "CTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
MURB1620CTD MURB1640CTD MURB1660CTD
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
o
V
RRM
V
RMS
V
DC
IF
(AV)
200
140
200
400
280
400
16.0
600
420
600
V
V
V
A
I
FSM
175
150
A
V
F
0.98
1.3
10.0
250
35
90
2.2
-55 to + 150
1.7
V
uA
uA
nS
pF
o
I
R
Trr
C
J
R
JC
T
J
, T
STG
C
/W
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I = 1.0A, Irr = 0.25A.
R
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/