MURF1620CTR thru MURF1660CTR
Pb
®
MURF1620CTR thru MURF1660CTR
Pb Free Plating Product
16.0 Ampere Unipolar/Common Anode Ultrafast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
ITO-220AB
.112(2.85)
.100(2.55)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.272(6.9)
.248(6.3)
.606(15.4)
.583(14.8)
Mechanical Data
Case: Molded plastic Isolated/Insulated ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.3 gram approximately
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
Automotive Environment/Inverters and Converters
Plating Power Supply/SMPS and UPS
Car Audio Amplifier and Sound Device System
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Positive
Common Cathode
Suffix "CT"
Negative
Common Anode
Suffix "CTR"
Doubler
Tandem Polarity
Suffix "CTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
MURF1620CTR MURF1640CTR MURF1660CTR
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
o
V
RRM
V
RMS
V
DC
IF
(AV)
200
140
200
400
280
400
16.0
600
420
600
V
V
V
A
I
FSM
175
150
A
V
F
0.98
1.3
10.0
250
35
90
2.2
-55 to + 150
1.7
V
uA
uA
nS
pF
o
I
R
Trr
C
J
R
JC
T
J
, T
STG
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I = 1.0A, Irr = 0.25A.
R
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
