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MURF1640DR 参数 Datasheet PDF下载

MURF1640DR图片预览
型号: MURF1640DR
PDF下载: 下载PDF文件 查看货源
内容描述: [16.0 Ampere Reverse Doubler Polarity Ultra Fast Recovery Half Bridge Rectifier]
分类和应用:
文件页数/大小: 2 页 / 263 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号MURF1640DR的Datasheet PDF文件第2页  
MURF1620DR thru MURF1660DR
®
Pb
MURF1620DR thru MURF1660DR
Pb Free Plating Product
16.0 Ampere Reverse Doubler Polarity Ultra Fast Recovery Half Bridge Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
ITO-220AB
Unit:mm
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Fully isolated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
Case
Case
Case
Case
Reverse Doubler
Doubler
Negative
Positive
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "DR"
Suffix "A"
Suffix "D"
Suffix "C"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
o
MURF1620DR MURF1640DR MURF1660DR
UNIT
200
140
200
400
280
400
16.0
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
175
150
A
V
F
0.98
1.3
5.0
250
35
90
2.2
-55 to + 150
1.7
V
uA
uA
nS
pF
o
I
R
Trr
C
J
R
JC
T
J
, T
STG
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I = 1.0A, Irr = 0.25A.
R
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/