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S10U45S 参数 Datasheet PDF下载

S10U45S图片预览
型号: S10U45S
PDF下载: 下载PDF文件 查看货源
内容描述: [10 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier]
分类和应用:
文件页数/大小: 2 页 / 301 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号S10U45S的Datasheet PDF文件第2页  
S10U45S
®
Pb Free Plating Product
S10U45S
Pb
10 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier
Features
TO-277/POWERDI5
.161(4.10)
.154(3.90)
.075(1.90)
.067(1.70)
.014(0.35)
.010(0.25)
Dimensions in inches and (millimeters)
.045(1.15)
.041(1.05)
High surge Forward current capability
Low Power loss, High efficiency
IF
AV
10A
Mounting Pad Layout
.132(3.36)
.191(4.86)
Applications
.039(1.00)
.031(0.80)
.075(1.90)
.071(1.80)
Bottom
.055(1.40)
VRRM
45V
.215(5.40)
.205(5.20)
.260(6.60)
.252(6.40)
.055(1.40)
.072(1.84)
Switching Power Supply Industry
Photovoltaic Solar cell Protection
Schottky Rectifier
LEFT PIN
RIGHT PIN
BOTTOM SIDE
HEAT SINK
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
Limiting Values(Absolute Maximum Rating)
Item
Repetitive Peak Reverse Voltage
Average Rectified Output Current
Surge(Non-repetitive)Forward
Current
Current Squared Time
Symbol
VRRM
Io
IFSM
Unit
V
A
A
Conditions
S10U45S
45
60HZ sine wave,
R- load, Ta=25℃
10
275
60HZ sine wave, 1 cycle, Ta=25℃
I2t
A2s
1ms≤t<8.3ms Tj=25℃
313
Storage Temperature
Tstg
-55 ~ +150
Junction Temperature
Tj
IN DC Forward Mode-Forward Operations
without reverse bias, t
≤1
h (Fig. 1)①
-55~+200
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Peak Forward Voltage
Peak Reverse Current
Symbol
VFM
IRRM1
IRRM2
Unit
V
mA
℃/W
V
RM
=V
RRM
Test Condition
I FM =10.0A
Tj=25℃
Tj=100℃
Between Junction and Lead
Max
0.47
0.3
15
10
Thermal Resistance(Typical)
R
θ
J-L
.033(0.85)
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/