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SDD10N04 参数 Datasheet PDF下载

SDD10N04图片预览
型号: SDD10N04
PDF下载: 下载PDF文件 查看货源
内容描述: [10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes]
分类和应用:
文件页数/大小: 2 页 / 400 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号SDD10N04的Datasheet PDF文件第2页  
SDD10N01 thru SDD10N07
®
SDD10N01 thru SDD10N07
Pb Free Plating Product
Pb
10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes
15.70
±0.20
2.80
±0.20
Application
13.08
±0.20
Mechanical Data
Case: Heatsink TO-220CE package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
0.80
±0.20
2.54typ
2.54typ
0.50
±0.20
3.02
±0.20
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,UPS and Motor Control
Car Audio Amplifiers and Sound Device Systems etc..
9.19
±0.20
Features
Latest&matured mesa technology with high reliablity
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
TO-220AB
9.90
±0.20
φ3
0
±
.6
0.
20
Unit:mm
4.50
±0.20
1.30
±0.20
6.50
±0.20
1.27
±0.20
1.52
±0.20
2.40
±0.20
Case
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Prefix "SDK"
Prefix "SDA"
Doubler
Tandem Polarity
Prefix "SDS"
Series
Tandem Polarity
Prefix "SDD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@5A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
(Note 1)
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
θJC
T
J
T
STG
SDD SDD SDD SDD SDD SDD SDD
UNIT
10N01 10N02 10N03 10N04 10N05 10N06 10N07
50
35
50
100
70
100
200
140
200
400
280
400
10
125
1.1
5
200
30
3
- 55 to +150
- 55 to +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
μA
pF
°C/W
°C
°C
o
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/