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SF1606G 参数 Datasheet PDF下载

SF1606G图片预览
型号: SF1606G
PDF下载: 下载PDF文件 查看货源
内容描述: 16.0安培玻璃钝化超快速恢复整流二极管 [16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes]
分类和应用: 整流二极管功效局域网
文件页数/大小: 2 页 / 304 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号SF1606G的Datasheet PDF文件第2页  
SF1601G thru SF1608G
®
Pb
Pb Free Plating Product
SF1601G thru SF1608G
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
Mechanical Data
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 2.03 grams
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Positive
Common Cathode
Negative
Common Anode
Suffix "A"
Doubler
Series Connection
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode
Common Anode Suffix "A"
Anode and Cathode Coexistence Suffix "D"
o
SYMBOL
V
RRM
V
RMS
V
DC
IF
(AV)
SF1601G SF1602G SF1604G SF1605G SF1606G SF1608G
SF1601GA SF1602GA SF1604GA SF1605GA SF1606GA SF1608GA
SF1601GD SF1602GD SF1604GD SF1605GD SF1606GD SF1608GD
UNIT
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
50
35
50
100
70
100
200
140
200
16.0
300
210
300
400
280
400
600
420
600
I
FSM
175
150
A
V
F
0.98
10.0
250
35
90
2.2
-55 to + 150
1.3
1.7
V
uA
uA
nS
pF
o
I
R
Trr
C
J
R
JC
T
J
, T
STG
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I = 1.0A, Irr = 0.25A.
R
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/