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SF168CTA 参数 Datasheet PDF下载

SF168CTA图片预览
型号: SF168CTA
PDF下载: 下载PDF文件 查看货源
内容描述: [16.0 Ampere Dual Common Anode Super Fast Recovery Diode]
分类和应用:
文件页数/大小: 2 页 / 230 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号SF168CTA的Datasheet PDF文件第2页  
SF164CTA thru SF168CTA
Pb
®
Pb Free Plating Product
SF164CTA thru SF168CTA
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
16.0 Ampere Dual Common Anode Super Fast Recovery Diode
Feature
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
Mechanical Data
Case:TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Environment(Inverters/Converters)
Plating Power Supply,Adaptor,SMPS and UPS
Car Audio Amplifiers and Sound Device System
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Positive
Common Cathode
Suffix "CT"
Negative
Common Anode
Suffix "CTA"
Doubler
Tandem Polarity
Suffix "CTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
o
SF164CTA SF166CTA SF168CTA
200
140
200
400
280
400
16.0
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
175
150
A
V
F
0.98
1.3
10.0
250
35
90
2.2
-55 to + 150
1.7
V
uA
uA
nS
pF
o
I
R
Trr
C
J
R
JC
T
J
, T
STG
C
/W
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I = 1.0A, Irr = 0.25A.
R
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/