SFA1601GR thru SFA1608GR
®
SFA1601GR thru SFA1608GR
Pb Free Plating Product
Pb
16.0 Ampere Reverse Polarity Super Fast Recovery Rectifier Diode
Features
Glass passivated chip junction
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approxiamtely
.038(0.96)
.019(0.50)
.50(12.7)MIN
.177(4.5)MAX
.624(15.87)
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Positive
Suffix "G"
Negative
Suffix "GR"
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@ 16 A
Maximum Reverse Current @ Rated VR
T
A
=25
℃
T
A
=100
℃
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θjC
T
J
T
STG
SFA
SFA
SFA
SFA
SFA
SFA
SFA
SFA
1601GR 1602GR 1603GR 1604GR 1605GR 1606GR 1607GR 1608GR
Unit
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
16
300
210
300
400
280
400
500
350
500
600
420
600
200
0.975
10
400
35
130
1
- 65 to + 150
- 65 to + 150
100
1.3
1.7
V
uA
nS
pF
℃
/W
℃
℃
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
