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STTH6003CW 参数 Datasheet PDF下载

STTH6003CW图片预览
型号: STTH6003CW
PDF下载: 下载PDF文件 查看货源
内容描述: [60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode]
分类和应用: 二极管PC局域网超快软恢复二极管快速软恢复二极管
文件页数/大小: 3 页 / 552 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
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STTH6003CW
STTH6003CW
Pb Free Plating Product
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode
®
Pb
APPLICATION
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
TO-247AD/TO-3P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
Internal Configuration
Base Backside
Anode
Anode
Cathode
GENERAL DESCRIPTION
STTH6003CW using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
R
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
P
D
T
J
T
STG
Torque
R
th(J-C)
Weight
Parameter
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
Thermal Resistance
T
C
=110°C, Per Diode
T
C
=25°C unless otherwise specified
Test Conditions
Values
300
300
30
60
42
480
156
-55to +150
-55 to +150
Recommended(M3)
Junction-to-Case, Per Diode
1.1
0.8
6
Unit
V
V
A
A
A
A
W
°C
°C
N·m
°C /W
g
T
C
=110°C, Per Package
T
C
=110°C, Per Diode
T
J
=45°C, t=10ms, 50Hz, Sine
ELECTRICAL CHARACTERISTICS
Symbol
I
RM
Parameter
Reverse Leakage Current
Test Conditions
V
R
=300V
V
R
=300V, T
J
=125°C
I
F
=30A
I
F
=30A, T
J
=125°C
T
C
=25°C unless otherwise specified
Min.
--
--
--
--
--
--
--
--
--
Typ.
--
--
1.25
1.12
22
35
2.5
70
6.8
Max.
10
10
1.8
--
--
--
--
--
--
Unit
µA
mA
V
V
ns
ns
A
ns
A
V
F
t
rr
t
rr
I
RRM
t
rr
I
RRM
Forward Voltage
Reverse Recovery Time
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Time
Max. Reverse Recovery Current
I
F
=1A, V
R
=30V, di
F
/dt=-200A/μs
V
R
=150V, I
F
=30A
di
F
/dt=-200A/μs, T
J
=25°C
V
R
=150V, I
F
=30A
di
F
/dt=-200A/μs, T
J
=125°C
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/