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U10A6CIC 参数 Datasheet PDF下载

U10A6CIC图片预览
型号: U10A6CIC
PDF下载: 下载PDF文件 查看货源
内容描述: [10.0 Ampere Insulated Common Cathode Ultra Fast Recovery Diodes]
分类和应用:
文件页数/大小: 2 页 / 612 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号U10A6CIC的Datasheet PDF文件第2页  
U10A2CIC thru U10A6CIC
Pb
®
Pb Free Plating Product
U10A2CIC thru U10A6CIC
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
10.0 Ampere Insulated Common Cathode Ultra Fast Recovery Diodes
Features
Glass passivation pellet
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.606(15.4)
.583(14.8)
Mechanical Data
Case: Isolation ITO-220AB full plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.03 gram approxiamtely
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "C"
Suffix "A"
Doubler
Tandem Polarity
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
U10A2CIC U10A4CIC U10A6CIC
UNIT
200
140
200
400
280
400
10.0
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
100
A
V
F
I
R
Trr
C
J
R
JC
T
J
, T
STG
0.98
1.3
10.0
250
35
65
2.2
-55 to +150
1.7
V
uA
uA
nS
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/