SLPS393 – OCTOBER 2013
30V N-Channel NexFET™ Power MOSFETs
Check for Samples:
1
FEATURES
Low Q
g
and Q
gd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 2-mm × 2-mm Plastic Package
PRODUCT SUMMARY
V
DS
Q
g
Q
gd
R
DS(on)
V
GS(th)
Drain to Source Voltage
Gate Charge Total (4.5 V)
Gate Charge Gate to Drain
Drain to Source On Resistance
Threshold Voltage
30
2.4
0.6
V
GS
= 4.5 V
V
GS
= 10 V
1.6
24
20
V
nC
nC
mΩ
mΩ
V
•
•
•
•
•
•
•
2
ORDERING INFORMATION
Device
CSD17571Q2
Package
SON 2-mm × 2-mm
Plastic Package
Media
7-Inch
Reel
Qty
3000
Ship
Tape and
Reel
APPLICATIONS
•
•
•
Optimized for Load Switch Applications
Storage, Tablets, and Handheld Devices
Optimized for Control FET Applications
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C
VALUE
30
±20
22
7.6
UNIT
V
V
A
A
A
W
°C
mJ
DESCRIPTION
This 30V, 20mΩ, Son2x2 NexFET™ power MOSFET
has been designed to minimize losses in power
conversion and load management applications, while
offering excellent thermal performance for the size of
the package.
Top View
D
1
D
6
D
V
DS
V
GS
I
D
I
DM
P
D
T
J
,
T
STG
E
AS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current (Package Limit)
Continuous Drain Current
Power Dissipation
Operating Junction and Storage
Temperature Range
Avalanche Energy, single pulse
I
D
= 12 A, L = 0.1 mH, R
G
= 25
Ω
Pulsed Drain Current, T
A
= 25°C
39
2.5
–55 to 150
7.2
(1) R
θJA
= 50 on 1in² Cu (2 oz.) on .060" thick FR4 PCB
D
2
5
D
(2) Pulse duration 10
μs,
duty cycle
≤2%
G
3
S
4
S
P0108-01
50
R
DS
(
on
)
- On-State Resistance (mΩ)
46
42
38
34
30
26
22
18
14
10
0
2
4
R
DS(on)
vs V
GS
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25°C, I
D
= 5A
T
C
= 125°C, I
D
= 5A
GATE CHARGE
10
9
8
7
6
5
4
3
2
1
0
0
0.5
1
1.5
2 2.5 3 3.5 4
Q
g
- Gate Charge (nC)
4.5
5
5.5
G001
I
D
= 5A
V
DS
=15V
6
8
10
12
14
16
V
GS
- Gate-to- Source Voltage (V)
18
20
G001
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
Copyright © 2013, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TI [ TEXAS INSTRUMENTS ]
