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SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SN65HVD3088E
SLLS562D − MARCH 2003 − REVISED SEPTEMBER 2005
DGK Package
THERMAL CHARACTERISTICS
PARAMETER
Θ
JA
Θ
JB
Θ
JC
P(AVG)
Junction-to-ambient thermal resistance(1)
Junction-to-board thermal resistance
Junction-to-case thermal resistance
Average power dissipation
RL = 54
Ω,
Input to D is a 200 kbps
50% duty cycle square wave
Vcc at 5.5 V, TJ = 130°C
RL = 54
Ω,
Input to D is a 1 Mbps
50% duty cycle square wave
Vcc at 5.5 V, TJ = 130°C
RL = 54
Ω,
Input to D is a 20 Mbps
50% duty cycle square wave
Vcc at 5.5 V, TJ = 130°C
High k board model
Low k board model
HVD3082E
TEST CONDITIONS
Low-k(2) board, no air flow
High-k(3) board, no air flow
High-k(3) board, no air flow
MIN
TYP
266
180
108
66
203
MAX
UNIT
°C/W
°C/W
mW
P(AVG)
Average power dissipation
HVD3085E
205
mW
P(AVG)
Average power dissipation
HVD3088E
−40
−40
276
93
75
mW
TA
Ambient air temperature
°C
TSD
Thermal shut-down junction temperature
165
°C
(1) See TI application note literature number SZZA003,
Package Thermal Characterization Methodologies,
for an explanation of this parameter.
(2) JESD51-3
Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
(3) JESD51-7
High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
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