tm
TE
CH
T14L1024N
SRAM
FEATURES
•
Fast Address Access Times : 10/12/15ns
•
Single 3.3V ±0.3V power supply
•
Center power/ground pin configuration
•
Low Power Consumption : 110/105/100mA
•
TTL I/O compatible
•
2.0V data retention mode
•
Automatic power-down when deselected
•
Available packages :
- 32-pin 300 mil and 400 mil SOJ
- 32-pin TSOP 8x13.4mm and 8x20mm
- 36-Ball CSP (8x10mm)
128K X 8 HIGH SPEED
CMOS STATIC RAM
GENERAL DESCRIPTION
The T14L1024N is a one-megabit density, fast
static random access memory organized as
131,072
words by 8 bits. It is designed for
use in high performance
memory applications
such as main memory storage and high speed
communication buffers. Fabricated using high
performance CMOS technology, access times
down to 10ns are achieved.
BLOCK DIAGRAM
Vcc
Vss
A0
.
..
.
A16
CE
DATA I/O
WE
OE
DECODER
PART NUMBER EXAMPLES
T14L1024N-10J
T14L1024N-10W
T14L1024N-10P
T14L1024N-10H
T14L1024N-10C
PACKAGE
SPEED
SOJ 300mil
10ns
SOJ 400 mil
10ns
10ns
TSOP 8x13.4mm
TSOP 8x20mm
10ns
36-Ball CSP
10ns
CORE
ARRAY
I/O0
.
.
.
I/O7
PIN DESCRIPTION
SYMBOL
A0 - A16
I/O0 - I/O7
CE
WE
OE
Vcc
Vss
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Inputs
Write Enable
Output Enable
Power Supply
Ground
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: APR. 2002
Revision: C
TMT [ TAIWAN MEMORY TECHNOLOGY ]
