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T15M64A-100N 参数 Datasheet PDF下载

T15M64A-100N图片预览
型号: T15M64A-100N
PDF下载: 下载PDF文件 查看货源
内容描述: 8K ×8低功耗CMOS静态RAM [8K X 8 LOW POWER CMOS STATIC RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 13 页 / 88 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
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tm
TE
CH
Preliminary T15M64A
Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the
outputs should not be applied.
2. The data output from
D
OUT
are the same as the data written to
D
IN
during the write cycle.
3.
D
OUT
provides the read data for the next address.
4. Transition is measured
±
500 mV from steady state with
C
L
= 5pF.
guaranteed but not 100% tested.
This parameter is
5. If OE is low during a WE controlled write cycle, the write pulse width must be the larger of
tWP or (tWHZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the
required tDW. If OE is high during a WE controlled write cycle, this requirement does
not apply and the write pulse can be as short as the specified tWP.
TM Technology Inc. reserves the right
P. 9
to change products or specifications without notice.
Publication Date: SEP. 2002
Revision:0.A