tm
RAS
TE
CH
CBR REFRESH CYCLE
(A0-A8 ;
OE
=DON‘T CARE)
T2316162A
tR P
tR A S
tR P
tR A S
V IH
V IL
tR P C
tC P N
tC S R
tC H R
tR P C
tC S R
tC H R
C A S H ,C A S L V IH
V IL
I/O
W E V IH
V IL
O PEN
HIDDEN REFRESH CYCLE
(
WE
=HIGH ;
OE
=LOW)
(R E A D )
tR A S
(R E F R E S H )
tR A S
tR P
R A S V IH
V IL
tC R P
tR C D
tR S H
tC H R
C A S L ,C A S H
V IH
V IL
tA R
tR A D
tA S R
tR A H
RO W
tA S C
tR A L
tC A H
A D D R V IH
V IL
C O LU M N
tA A
tR A C
tC A C
tC L Z
N O TE1
tO F F 1
I/O
VOH
VOL
O PEN
tO A C
V A L ID D A T A
tO F F 2
O PEN
O E V IH
V IL
tO R D
DON'T CARE
UNDEFINED
Note:
1. t
OFF1
is referenced from the rising edge of RAS or CAS , whichever occurs last.
TM Technology Inc. reserves the right
P. 11
to change products or specifications without notice.
Publication Date: APR. 2002
Revision:E
TMT [ TAIWAN MEMORY TECHNOLOGY ]
