tm
TE
CH
T35L6432B
AC ELECTRICAL CHARACTERISTICS
(Note 5)
(0°C≤TA
≤70°C;VCC=3.3V
+0.3V/-0.165V)
DESCRIPTION
Clock
Clock cycle time
Clock to output valid
Clock to output invalid
Clock to output in Low-Z
Output Times
Clock HIGH time
Clock LOW time
Clock to output in High-Z
OE to output valid
OE to output in Low-Z
OE to output in High-Z
Setup Times
Address
Address Status( ADSC , ADSP )
Address Advance ( ADV )
Byte Write Enables
( BW1~ BW4 , BWE , GW )
Data-in
Chip Enables( CE , CE2 ,CE2)
Hold Times
Address
Address Status( ADSC , ADSP )
Address Advance ( ADV )
Byte Write Enables
( BW1~ BW4 , BWE , GW )
Data-in
Chip Enables( CE , CE2 ,CE2)
-9
SYM.
-10
-11
-12
MIN MAX MIN MAX MIN MAX MIN MAX
UNITS NOTES
tKC
tKQ
tKQX
tKQLZ
tKH
tKL
tKQHZ
tOEQ
tOELZ
tOEHZ
tAS
tADSS
tAAS
tWS
tDS
tCES
tAH
tADSH
tAAH
tWH
tDH
tCEH
10.5
9.0
3
3
1.8
1.8
5
5
0
5
1.7
1.7
1.7
1.7
1.7
1.7
0.5
0.5
0.5
0.5
0.5
0.5
15
10
3
3
1.9
1.9
5
5
0
5
2.0
2.0
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0.5
0.5
15
11
3
3
2.0
2.0
5
5
0
5
2.0
2.0
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0.5
0.5
15
12
3
3
2.0
2.0
5
5
0
5
2.0
2.0
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6, 7
6, 7
9
6, 7
6, 7
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
8, 10
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
P.9
Publication Date: JUL. 2002
Revision: A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
