tm
TE
CH
Preliminary T4312816A
DC CHARACTERISTICS
T
A
= 0 to 70
°C
, V
IH
(min)/V
IL
(max)=2.0V/0.8V
Parameter
Operating Current
( One Bank Active)
Symbol
-6
I
CC1
Speed version
-7
-7.5
-8
-10
Burst Length = 1
Unit
Test Condition
Note
140 120 115 110 100 mA
2
2
20
mA
8
5
4
30
mA
20
150 130 125 120 110
150 130 125 120 110
t
RC
≥
t
RC
(min) ,
t
CC
≥
t
CC
(min),I
OL
= 0 mA
CKE
≤
V
IL
(max),
t
CC
=15ns
1,3
Precharge Standby I
CC2
P
Current in power-
I
CC2
PS
down mode
Precharge Standby
Current in non
power-down mode
I
CC2
N
I
CC2
NS
Active Standby
I
CC3
P
Current in power-
I
CC3
PS
down mode
Active Standby
I
CC3
N
Current in non
power-down mode
(One Bank Active) I
CC3
NS
Operating Current
(Burst Mode)
Refresh Current
Self refresh
Current
I
CC4
mA
CKE
≤
V
IL
(max),CLK
≤
V
IL
(max),
t
CC
=
∞
3
CKE
≥
V
IH
(min),
CS
≥
V
IH
(min),
t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min),CLK
≤
V
IL
(min),
t
CC
=
∞
Input signals are stable
CKE
≤
VIL(max),
t
CC
=15ns
CKE
≤
V
IL
(max),CLK
3
mA
≤
V
IL
(max),
t
CC
=
∞
3
CKE
≥
V
IH
(min),
CS
≥
V
IH
(min),
t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min),CLK
≤
V
IL
(min),
t
CC
=
∞
Input signals are stable
CAS Latency 3
I
OL
=0 mA,Page Burst
All Band Activated
CAS Latency 2
3
mA
1,3
t
CCD
=
t
CCD
(min)
2,3
I
CC5
I
CC6
150 130 125 120 110 mA t
RC
≥
t
RC
(min)
2
mA
CKE
≤
0.2V
Note:
1. Measured with output open. Addresses are changed only one time during
t
CC
(min)
.
2. Refresh period is 64ms. Addresses are changed only one time during
t
CC
(min)
.
3.
t
CC
: Clock cycle time.
t
RC
: Row cycle time.
t
CCD
: Column address to column address delay time.
TM Technology Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: APR. 2003
Revision: 0.B
TMT [ TAIWAN MEMORY TECHNOLOGY ]
