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T431616A
SDRAM
FEATURES
3.3V power supply
Clock cycle time : 6 / 7 / 8 / 10 ns
Dual banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going
edge of system clock
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Burst Read Single-bit Write operation
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DQM for masking
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Auto refresh and self refresh
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32ms refresh period (2K cycle)
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MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
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Available package type in 50 pin TSOP(II)
and 60-pin CSP.
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Operating temperature :
- -5 ~ +70
°C
-
-40 ~ +85
°C
1M x 16 SDRAM
512K x 16bit x 2Banks Synchronous DRAM
GRNERAL DESCRIPTION
The T431616A is 16,777,216 bits synchronous
high data rate Dynamic RAM organized as
2 x 524,288 words by 16 bits , fabricated with high
performance CMOS technology . Synchronous
design allows precise cycle control with the use of
system clock I/O transactions are possible on every
clock cycle . Range of operating frequencies ,
programmable burst length and programmable
latencies allow the same device to be useful for a
variety of high bandwidth , high performance
memory system applications.
PART NUMBER EXAMPLES
PART NO.
CLOCK
CYCLE TIME
7ns
7ns
7ns
7ns
MAX
FREQUENCY
PACKAGE
TSOP-II
CSP
TSOP-II
CSP
OPERATING
TEMPERATURE
T431616A-7S
T431616A-7C
T431616A-7SI
T431616A-7CI
143 MHz
143 MHz
143 MHz
143 MHz
-5 ~ +70
°C
-5 ~ +70
°C
-40 ~ +85
°C
-40 ~ +85
°C
Taiwan Memory Technology, Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: DEC. 2000
Revision: C
TMT [ TAIWAN MEMORY TECHNOLOGY ]
