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T431616B
SDRAM
FEATURES
+2.7 to +3.6V power supply
Dual banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going edge
of system clock
Burst Read Single-bit Write operation
DQM for masking
Auto refresh and self refresh
32ms refresh period (2K cycle)
MRS cycle with address key programs
- CAS Latency ( 1 & 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
Available package type in 50 pin TSOP(II)
1M x 16 SDRAM
512K x 16bit x 2Banks Synchronous DRAM
GRNERAL DESCRIPTION
The T431616B is 16,777,216 bits synchronous
high data rate Dynamic RAM organized as
2 x 524,288 words by 16 bits , fabricated with high
performance CMOS technology . Synchronous
design allows precise cycle control with the use of
system clock I/O transactions are possible on every
clockcycle . Range of operating frequencies ,
programmable burst length and programmable
latencies allow the same device to be useful for a
variety of high bandwidth , high performance
memory system applications.
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and 60-pin CSP
ORDERING INFORMATION
MAX
PART NO.
FREQUENCY
T431616B-20S
T431616B-20C
T431616B-10S
T431616B-10C
50 MHz
50 MHz
100 MHz
100 MHz
PACKAGE
TSOP-II
CSP
TSOP-II
CSP
Taiwan Memory Technology, Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: JUL. 2001
Revision:A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
