TE
T63H0008A
DS pin
The DS pin is a test pin for delay time measurement and it should be open in the actual application. If a
capacitor whose capacitance is larger than 100pF or a resister whose resistance is larger than 100kW is
connected to this pin, error may occur in the delay time.
0V battery charge function (*1) (*2)
This function is used to recharge the connected battery whose voltage is 0V due to the self-discharge. When
the0V battery charge starting charger voltage (V0CHA ) or higher is applied between EB+ and EB- pins by
connecting a charger, the charging control FET gate is fixed to VDD pin voltage. When the voltage between
the gate and source of the charging control FET becomes equal to or higher than the turn-on voltage by the
charger voltage, the charging control FET turns on to start charging. At this time, the discharging control
FET is off and the charging current flowsthrough the internal parasitic diode in the discharging control FET.
When the battery voltage becomes equal to or higher than the over-discharge releasevoltage, the
T63H0008A enters the normal condition.
0V battery charge inhibition function (*1)
This function inhibits the recharging when a battery which is short-circuited (0V) internally is connected.
When the batteryvoltage is 1.0 V (typ.) or lower, the charging control FET gate is fixedto EB- pin voltage
to inhibit charging. When the battery voltage is the 0V batterycharge inhibition battery voltage (V0INH ) or
higher, charging can be performed.
(*1) Some battery providers do not recommend charging for completely self-discharged battery. Please ask
battery providers before determining the 0V battery charge function.
(*2) The 0V battery charge function has higher priority than the abnormal charge current detection function.
Consequently, aproduct with the 0V battery charge function charges a battery forcedly and abnormal
charge current cannot be detected when the battery voltage is low.
TMTechnology, Inc. reserves the right
to change products or specifications without notice.
P. 13
Publication Date:Dec. 2003
Revision:A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
