XP131A0616SR
◆
N-Channel Power MOS FET
◆
DMOS Structure
Power MOSFET
■
Applications
●
Notebook PCs
●
Cellular and portable phones
●
On-board power supplies
●
Li-ion battery systems
◆
Low On-State Resistance: 0.016Ω MAX
◆
Ultra High-Speed Switching
◆
SOP-8 Package
■
General Description
The XP131A0616SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■
Features
Low on-state resistance:
Rds(on)=0.016Ω(Vgs=4.5V)
Rds(on)=0.022Ω(Vgs=2.5V)
Rds(on)=0.045Ω(Vgs=1.5V)
Ultra high-speed switching
Operational Voltage:
1.5V
High density mounting:
SOP-8
u
■
Pin Configuration
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
■
Pin Assignment
PIN
NUMBER
1~3
4
5~8
PIN
NAME
S
G
D
FUNCTION
Source
Gate
Drain
SOP-8
(TOP VIEW)
■
Equivalent Circuit
■
Absolute Maximum Ratings
PARAMETER
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
20
±8
10
30
10
2.5
150
-55~150
Ta=25:
UNITS
V
V
A
A
A
W
:
:
1
2
3
4
N-Channel MOS FET
(1 device built-in)
8
7
6
5
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Note: When implemented on a glass epoxy PCB
345
TOREX [ TOREX SEMICONDUCTOR ]
