Power MOS FET
NN-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance : 0.03Ω (max)
NUltra
High-Speed Switching
NSOP-8
Package
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP131A1330SR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds (on) = 0.03Ω ( Vgs = 4.5V )
: Rds (on) = 0.04Ω ( Vgs = 2.5V )
: Rds (on) = 0.07Ω ( Vgs = 1.5V )
Ultra high-speed switching
Operational Voltage
: 1.5V
High density mounting
: SOP-8
■Pin Configuration
S
1
S
2
S
3
G
4
SOP-8
(TOP VIEW)
■Pin Assignment
D
D
D
D
PIN NUMBER
PIN NAME
S
G
D
FUNCTION
8
7
6
5
1 ∼ 3
4
5 ∼ 8
Source
Gate
Drain
■Equivalent Circuit
1
2
3
4
N-Channel MOS FET
( 1 device built-in )
■Absolute Maximum Ratings
Ta=25℃
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
11
8
7
6
5
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
UNITS
V
V
A
A
A
W
℃
℃
20
±
8
8
30
8
2.5
150
-55∼150
Channel Temperature
Storage Temperature
( note ) : When implemented on a glass epoxy PCB
699