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Electrical Characteristics
Drain Current vs. Drain / Source Voltage
-20
-10V
-5V
Pulse Test, Ta = 25℃
Drain Current vs. Gate / Source Voltage
-20
Vds= -10V, Pulse Test
-4.5V
25℃
-16
-16
Drain Current:Id (A)
Drain Current:Id (A)
-4V
Ta=-55℃
-12
-3.5V
-12
125℃
-8
-8
-3V
-4
Vgs=-2.5V
-4
0
0
-1
-2
-3
-4
-5
0
0
-1
-2
-3
-4
-5
Drain/Source Voltage:Vds (V)
Gate/Source Voltage:Vgs (V)
Drain / Source On-State Resistance
vs. Gate / Source Voltage
0.3
Pulse Test, Ta = 25℃
Drain / Source On-State Resistance
vs. Drain Current
1
Pulse Test, Ta = 25℃
Drain / Source On- State Resistance
:Rds (on) (Ω)
0.25
0.2
Id=-5A
Drain / Source On- State Resistance
:Rds (on) (Ω)
Vgs=-4.5V
u
0.15
-3A
0.1
-10V
0.1
0.05
0
0
-2
-4
-6
-8
-10
0.01
0
-5
-10
-15
-20
Gate/Source Voltage:Vgs (V)
Drain Current:Id (A)
Drain / Source On-State Resistance
vs. Ambient Temperature
Gate / Source Cut Off Voltage Variance
:Vgs (off) Variance (V)
0.3
Pulse Test
Gate / Source Cut Off Voltage Variance
vs. Ambient Temperature
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
Vds = -10V, Id = -1mA
Drain / Source On- State Resistance
:Rds (on) (Ω)
0.25
0.2
0.15
Vgs=-4.5V
Id=-5A
-3A
0.1
0.05
-10V
-3A, -5A
0
-50
0
50
100
150
-50
0
50
100
150
Ambient Temp. :Topr (℃)
Ambient Temp. :Topr (℃)
387
TOREX [ TOREX SEMICONDUCTOR ]
