XP134A01A9SR
■ Electrical Characteristics
Drain/Source Voltage vs. Capacitance
10000
Vgs=0V, f=1MHz
Power MOS FET
Switching Time vs. Drain Current
1000
Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≦1%
Capacitance:Ciss, Coss, Crss (pF)
Switching Time:t (ns)
1000
tf
Ciss
Coss
100
td
（off）
100
Crss
tr
td
（on）
10
0
-10
-20
-30
10
-0.1
-1
-10
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
-10
Vds=-10V, Id=-3.5A
Reverse Drain Current vs. Source/Drain Voltage
-10
Pulse Test
u
Reverse Drain Current:Idr (A)
Gate/Source Voltage:Vgs (V)
-8
-8
-6
-6
Vgs＝-4.5V
-4
0,4.5V
-4
-2
-2
0
0
5
10
15
20
0
0
-0.2
-0.4
-0.6
-0.8
-1
Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Standardized Transition Thermal Resistance:γs(t)
Rth (ch-a)=62.5˚C/W, (Implemented on a glass epoxy PCB)
10
1
Single pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
424
TOREX [ TOREX SEMICONDUCTOR ]
