Power MOS FET
NP-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance: 0.11Ω (max)
NUltra
High-Speed Switching
NSOP-8
Package
NTwo
FET Devices Built-in
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP134A02A1SR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds(on)=0.11Ω (Vgs=-4.5V)
: Rds(on)=0.2Ω (Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting
: SOP-8
■Pin Configuration
S1
1
G1
2
S2
3
G2
4
SOP-8
(TOP VIEW)
■Pin Assignment
PIN
NUMBER
1
2
3
4
5~6
7~8
PIN
NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source
Gate
Source
Gate
Drain
Drain
8
D1
7
D1
6
D2
5
D2
11
Ta=25:
UNITS
V
V
A
A
A
W
:
:
■Equivalent Circuit
1
2
3
4
8
7
6
■Absolute Maximum Ratings
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
-20
±12
-4
-12
-4
2
150
-55~150
5
Drain Current (Pulse)
Reverse Drain Current
P-Channel MOS FET
(2 devices built-in)
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Note: When implemented on a glass epoxy PCB
791
TOREX [ TOREX SEMICONDUCTOR ]
