XP151A12A2MR
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N-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.1
Ω
(max)
Ultra High-Speed Switching
Gate Protect Diode Built-in
SOT - 23 Package
Power MOS FET
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Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
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General Description
The XP151A12A2MR is a N-Channel Power MOS FET with low on
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
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Features
Low on-state resistance :
Rds (on) = 0.1Ω ( Vgs = 4.5V )
Rds (on) = 0.16Ω ( Vgs = 2.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage :
2.5V
High density mounting :
SOT - 23
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Pin Configuration
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Pin Assignment
D
3
u
PIN NUMBER
1
2
3
PIN NAME
G
S
D
FUNCTION
Gate
Source
Drain
1
G
2
S
SOT - 23 Top View
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Equivalent Circuit
3
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Absolute Maximum Ratings
Ta=25
O
C
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
20
+ 12
1
4
1
0.5
150
-55 to 150
UNITS
V
V
A
A
A
W
O
1
2
Power Dissipation (note)
Channel Temperature
Storage Temperature
C
C
O
N - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a ceramic PCB
458
TOREX [ TOREX SEMICONDUCTOR ]
