XP161A1265PR
Power MOSFET
ETR1123_001
■GENERAL
DESCRIPTION
The XP161A1265PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■APPLICATIONS
●Notebook
PCs
●Cellular
and portable phones
●On-board
power supplies
●Li-ion
battery systems
■FEATURES
Low On-State Resistance
: Rds(on)=0.055Ω@ Vgs=4.5V
: Rds(on)=0.095Ω@ Vgs=2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 2.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
■PIN
CONFIGURATION
■PIN
ASSIGNMENT
PIN
NUMBER
1
2
3
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
■EQUIVALENT
CIRCUIT
■ABSOLUTE
MAXIMUM RATINGS
Ta = 25℃
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature Range
SYMBOL RATINGS UNITS
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
20
±12
4
16
4
2
150
-55~150
V
V
A
A
A
W
℃
℃
* When implemented on a ceramic PCB
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