XP162A11C0PR
Power MOSFET
ETR1125_001
■GENERAL
DESCRIPTION
The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■APPLICATIONS
●Notebook
PCs
●Cellular
and portable phones
●On-board
power supplies
●Li-ion
battery systems
■FEATURES
Low On-State Resistance
: Rds(on) = 0.15Ω@ Vgs = -10V
: Rds(on) = 0.28Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Driving Voltage
: -4.5V
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
■PIN
CONFIGURATION
■PIN
ASSIGNMENT
PIN
NUMBER
1
2
3
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
■EQUIVALENT
CIRCUIT
■ABSOLUTE
MAXIMUM RATINGS
Ta = 25℃
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature Range
SYMBOL RATINGS
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-30
±20
-2.5
-10
-2.5
2
150
-55~150
UNITS
V
V
A
A
A
W
℃
℃
* When implemented on a ceramic PCB
1/5
TOREX [ TOREX SEMICONDUCTOR ]
