1SS314
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SS314
VHF Tuner Band Switch Applications
•
•
•
Small package.
Small total capacitance: C
T
= 1.2 pF (max)
Low series resistance: r
s
= 0.5
Ω
(typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
V
R
I
F
T
j
T
stg
Rating
30
100
125
−55~125
Unit
V
mA
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
―
―
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Forward voltage
Reverse current
Reverse voltage
Total capacitance
Series resistance
Symbol
V
F
I
R
V
R
C
T
r
s
I
F
=
2 mA
V
R
=
15 V
I
R
=
1
μA
V
R
=
6 V, f
=
1 MHz
I
F
=
2 mA, f
=
100 MHz
Test Condition
Min
⎯
⎯
30
⎯
⎯
Typ.
⎯
⎯
⎯
0.7
0.5
Max
0.85
0.1
⎯
1.2
0.9
Unit
V
μA
V
pF
Ω
Marking
1
2007-11-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
