1SS352
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SS352
Ultra High Speed Switching Application
Small package
Low forward voltage
Small total capacitance
: V
F (3)
= 0.98V (typ.)
: C
T
= 0.5pF (typ.)
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
200
100
1
200 (*)
125
−55~125
Unit
V
V
mA
mA
A
mW
°C
°C
JEDEC
EIAJ
―
―
1-1E1A
TOSHIBA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.004g
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Mounted on a glass epoxy circuit board of 20
×
20mm,
pad dimension of 4
×
4mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
―
―
―
―
―
―
―
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MH
z
I
F
= 10mA, Fig.1
Min
―
―
―
―
―
―
―
Typ.
0.62
0.75
0.98
―
―
0.5
1.6
Max
―
―
1.20
0.1
0.5
3.0
4.0
V
Unit
μA
pF
ns
1
2007-11-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
