2SA1015(L)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications
Low Noise Amplifier Applications
·
·
·
·
High voltage and high current: V
CEO
=
−50
V (min),
I
C
=
−150
mA (max)
Excellent h
FE
linearity: h
FE
(2) = 80 (typ.) at V
CE
=
−6
V, I
C
=
−150
mA
: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA) = 0.95 (typ.)
Low noise: NF = 0.2dB (typ.) (f =
1
kHz)
Complementary to 2SC1815 (L)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
-50
-50
-5
-150
-50
400
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Weight: 0.21 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
I
CBO
I
EBO
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
V
CE (sat)
V
BE (sat)
f
T
C
ob
r
bb’
NF (1)
Noise figure
NF (2)
Test Condition
V
CB
= -50
V, I
E
=
0
V
EB
= -5
V, I
C
=
0
V
CE
= -6
V, I
C
= -2
mA
V
CE
= -6
V, I
C
= -150
mA
I
C
= -100
mA, I
B
= -10
mA
I
C
= -100
mA, I
B
= -10
mA
V
CE
= -10
V, I
C
= -1
mA
V
CB
= -10
V, I
E
=
0
f
=
1 MHz
V
CB
= -10
V, I
E
=
1 mA
f
=
30 MHz
V
CE
= -6
V, I
C
= -0.1
mA
f
=
100 Hz, R
G
=
10 kW
V
CE
= -6
V, I
C
= -0.1
mA
f
=
1 kHz, R
G
=
10 kW
Min
¾
¾
70
25
¾
¾
80
¾
¾
¾
¾
Typ.
¾
¾
¾
80
-0.1
¾
¾
4
30
0.5
0.2
Max
-0.1
-0.1
400
¾
-0.3
-1.1
¾
7
¾
6
dB
3
V
V
MHz
pF
W
Unit
mA
mA
Note: h
FE (1)
classification
O: 70~140, Y: 120~240, GR: 200~400
1
2003-03-27
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
