2SA1160
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications
Medium Power Amplifier Applications
•
High DC current gain and excellent h
FE
linearity
: h
FE (1)
= 140 to 600 (V
CE
=
−1
V, I
C
=
−0.5
A)
: h
FE (2)
= 60 (min), 120 (typ.) (V
CE
=
−1
V, I
C
=
−4
A)
•
Low saturation voltage
: V
CE (sat)
=
−0.5
V (max) (I
C
=
−2
A, I
B
=
−50
mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulsed (Note 1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
−20
−10
−6
−2
−4
−2
900
150
−55
to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
―
2-5J1A
Weight: 0.36 g (typ.)
Note 1: Pulse width
=
10 ms (max), duty cycle
=
30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
