2SA1162
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162
Audio Frequency General Purpose Amplifier Applications
·
·
·
·
·
·
High voltage and high current: V
CEO
=
−50
V, I
C
=
−150
mA (max)
Excellent h
FE
linearity: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA)
= 0.95 (typ.)
High h
FE:
h
FE
= 70~400
Low noise: NF =
1dB
(typ.),
10dB
(max)
Complementary to 2SC2712
Small package
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
-50
-50
-5
-150
-30
150
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Weight: 0.012 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
NF
Test Condition
V
CB
= -50
V, I
E
=
0
V
EB
= -5
V, I
C
=
0
V
CE
= -6
V, I
C
= -2
mA
I
C
= -100
mA, I
B
= -10
mA
V
CE
= -10
V, I
C
= -1
mA
V
CB
= -10
V, I
E
=
0, f
=
1 MHz
V
CE
= -6
V, I
C
= -0.1
mA, f
=
1 kHz,
Rg
=
10 kW,
Min
¾
¾
70
¾
80
¾
¾
Typ.
¾
¾
¾
-0.1
¾
4
1.0
Max
-0.1
-0.1
400
-0.3
¾
7
10
V
MHz
pF
dB
Unit
mA
mA
Note: h
FE
classification
O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, (
) marking symbol
Marking
1
2003-03-27
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
