2SB1375
TOSHIBA Transistor
Silicon PNP Triple Diffused Type
2SB1375
Audio Frequency Power Amplifier
Unit: mm
•
•
•
•
Low saturation voltage: V
CE (sat)
=
−1.5
V (max)
(I
C
=
−2
A, I
B
=
−0.2
A)
High power dissipation: P
C
= 25 W (Tc = 25°C)
Collector metal (fin) is covered with mold resin
Complementary to 2SD2012
Absolute Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−60
−60
−7
−3
−0.5
2.0
25
150
−55
to 150
Unit
V
V
V
A
A
JEDEC
W
°C
°C
―
―
2-10R1A
JEITA
TOSHIBA
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
