2SC5755
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5755
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
·
·
·
High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.2 A)
Low collector-emitter saturation voltage: V
CE (sat)
= 0.12 V (max)
High-speed switching: t
f
= 25 ns (typ.)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
DC
t
=
10 s
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
(Note)
T
j
T
stg
Rating
20
10
7
2
3.5
200
500
750
150
-55
to 150
Unit
V
V
V
A
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-3S1C
Weight: 0.01 g (typ.)
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
2
645 mm )
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(1)
h
FE
(2)
V
CE (sat)
V
BE (sat)
t
r
t
stg
t
f
Test Condition
V
CB
=
20 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
I
C
=
10 mA, I
B
=
0
V
CE
=
2 V, I
C
=
0.2 A
V
CE
=
2 V, I
C
=
0.6 A
I
C
=
0.6 A, I
B
=
12 mA
I
C
=
0.6 A, I
B
=
12 mA
See Figure 1 circuit diagram.
V
CC
≈
6 V, R
L
=
10
W
I
B1
= -I
B2
=
12 mA
Min
¾
¾
10
400
200
¾
¾
¾
¾
¾
Typ.
¾
¾
¾
¾
¾
¾
¾
60
215
25
Max
100
100
¾
1000
¾
0.12
1.10
¾
¾
¾
ns
V
V
Unit
nA
nA
V
1
2002-07-22
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
