2SD2012
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
Unit: mm
•
•
•
High DC current gain: h
FE (1)
= 100 (min)
Low saturation voltage: V
CE (sat)
= 1.0 V (max)
High power dissipation: P
C
= 25 W (Tc = 25°C)
Absolute Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
60
7
3
0.5
2.0
25
150
−55
to 150
Unit
V
V
V
A
A
W
JEDEC
°C
°C
―
―
2-10R1A
JEITA
TOSHIBA
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
