2SK2009
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2009
High Speed Switching Applications
Analog Switch Applications
•
•
•
•
•
•
High input impedance.
Low gate threshold voltage: V
th
= 0.5~1.5 V
Excellent switching times: t
on
= 0.06
μs
(typ.)
t
off
= 0.12
μs
(typ.)
Low drain-source ON resistance: R
DS (ON)
= 1.2
Ω
(typ.)
Small package.
Enhancement-mode
Unit: mm
Marking
Equivalent Circuit
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
30
±20
200
200
150
−55~150
Unit
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with caution.
1
2007-11-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
