2SK3051
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3051
Chopper Regulator DC−DC Converter, and Motor Drive
Applications
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 24 mΩ (typ.)
Unit: mm
: |Y
fs
| = 27 S (typ.)
: I
DSS
= 100
μA
(max) (V
DS
= 50 V)
: V
th
= 1.5 to 3.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
50
50
±20
45
135
40
115
45
4
150
−55
to 150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-10S1B
Weight: 1.5 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
3.125
83.3
Unit
°C / W
JEDEC
°C / W
―
―
2-10S2B
JEITA
TOSHIBA
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 25 V, T
ch
= 25°C (initial), L = 71
μH,
R
G
= 25
Ω,
I
AR
= 45 A
Note 3: Repetitive rating;: pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Weight: 1.5 g (typ.)
1
2009-09-29
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
