2SK3562
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3562
Switching Regulator Applications
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 0.9Ω (typ.)
High forward transfer admittance: |Y
fs
| = 5.0S (typ.)
Low leakage current: I
DSS
= 100
μA
(V
DS
= 600 V)
Enhancement mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
600
±30
6
24
40
345
6
4
150
-55~150
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
Unit
V
V
V
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
3.125
62.5
Unit
2
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
DD
=
90 V, T
ch
=
25°C(initial), L
=
16.8 mH, I
AR
=
6 A, R
G
=
25
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
1
2004-07-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
